Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

By Shalom J. Wind, Joerg Appenzeller, Richard Martel, V. Derycke, Phaedon Avouris. 2002

626 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/84a640381dbb822323b2931945930bae4e72bd1a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

High-performance carbon nanotube field-effect transistor with tunable polarities (2005, methodology): “Since then, remarkable progress has been made to improve the performance of CNFETs by approaches such as: 1) reducing the gate–oxide thickness [8]; 2) adopting highdielectrics for the gate oxide [9]–[11]; 3) using an electrolyte”
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (2003, background): “CARBON NANOTUBE field-effect transistors (CNTFETs) with promising device characteristics have recently been demonstrated [1], [2], so the question of the ultimate device performance capability and minimum device size that might be achievable from an optimized technology becomes important.”
Properties and applications of high-mobility semiconducting nanotubes (2004, background): “Recent improvements have allowed local gate contacts either beneath the nanotubes (Bachtold et al 2001) or on top of the nanotubes (Javey et al 2002, Wind et al 2002) which makes it possible to have several nanotube devices on one chip and address them separately.”
AC performance of nanoelectronics: towards a ballistic THz nanotube transistor (2004, neutral): “001 [17] 200 3 < [12] 0 20 < [11] 80 12 < [18] 500 0.”
Epitaxial Graphene Transistors on SiC Substrates (2008, background): “research into carbon devices has focused on carbon nanotubes [4]–[6].”
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “In particular the possibility to obtain ballistic transport over several hundred nanometers at room-temperature [2], [3], [4] together with a very large Fermi velocity of around 10(8)cm/s [5] allows for high performance on-state characteristics [6], [7], [8], [9].”