Adrian M. Ionescu
Electrical and Electronic Engineering · 2005–2011
A researcher in the Science corpus: 7 papers; trusts 9 researchers and is trusted by 28 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 44 citations into it; #940 of 16,539 by trust here, #3,551 by citations
- Materials Chemistry — 11 citations into it
Whom Adrian M. Ionescu trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- K. K. Bhuwalka
- Joerg Appenzeller
- K. Boucart
- Joachim Knoch
- Ignaz Eisele
- Jörg Schulze
- Yu-ming Lin
- Sayeef Salahuddin
- Jerry G. Fossum
- Qin Zhang
Who trusts Adrian M. Ionescu overall
- D. Abdi
- Mamidala Jagadesh Kumar
- Sneh Saurabh
- Sanjay Kumar
- Marie Garcia Bardon
- Bahniman Ghosh
- Michael Bedford Taylor
- Yasin Khatami
- Ekta Goel
- M. Jagadesh Kumar
Papers from Adrian M. Ionescu's perspective
Ordered by how strongly the researchers Adrian M. Ionescu trusts endorse each paper. Same corpus, a different order for every researcher.
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
- Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
- Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates (IEEE Electron Device Letters)
- Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (IEEE Transactions on Electron Devices)
- Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
- Low-subthreshold-swing tunnel transistors (IEEE Electron Device Letters)
- Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
- High-κ gate dielectrics: Current status and materials properties considerations
- International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について -
- Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics (IEEE Transactions on Electron Devices)
Their papers
- Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (2007) — 1,117 citations
- Tunnel field-effect transistors as energy-efficient electronic switches (2011) — 2,706 citations
- Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric (2007) — 333 citations
- A new definition of threshold voltage in Tunnel FETs (2008) — 162 citations
- Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification (2010) — 219 citations
- Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor (2005) — 183 citations
- Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack (2008) — 137 citations