Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

By Joachim Knoch, Joerg Appenzeller. IEEE Electron Device Letters, 2010

210 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3b7d47e7db2b12f8e4f989309c5fb0f45364f028

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Wilfried E. Haensch
2. Dharmendra Singh Yadav
3. Steven J. Koester
4. Dheeraj Sharma
5. Alan C. Seabaugh
6. Siyu Koswatta

In Electrical and Electronic Engineering

1. Siyu Koswatta
2. Wilfried E. Haensch
3. Dharmendra Singh Yadav
4. Steven J. Koester
5. Hao Lu
6. Dheeraj Sharma
7. Alan C. Seabaugh

Citations in the corpus

• Low-Voltage Tunnel Transistors for Beyond CMOS Logic (2010, unknown): “In lieu of higher source dopings, the on-current can be further increased through the use of staggered [55], [56] or broken-gap heterojunction [52] and pockets [45].”
• Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “n-channel TFETs, the performance of p-channel devices is limited by the low conduction-band density-ofstates [14], [19], [20].”
• Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor (2017, methodology): “The different methods are explored to improve ION and SS-like High-k gate dielectric [12], heterojunction technology [13], [14] (i.”
• On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010, methodology): “One approach to mitigate this problem could be to use a smaller wire diameter in the source and a wider diameter in the channel [22], [38].”