Carbon nanotubes as schottky barrier transistors.
By S. Heinze, J. Tersoff, R. Martel, V. Derycke, Joerg Appenzeller, Phaedon Avouris. Physical Review Letters, 2002
1,149 citations recorded by the source corpus.
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors," in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/8284930ad27147d5b4b614f3fa78bc772d8c3127
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In Atomic and Molecular Physics, and Optics
- Phaedon Avouris
- Joerg Appenzeller
- Mark S. Lundstrom
- Jing Guo
- Joachim Knoch
- Charles M. Lieber
- Anisur Rahman
- Kaustav Banerjee
In Materials Chemistry
- Phaedon Avouris
- Joerg Appenzeller
- Kaustav Banerjee
- Hong Li
- Joachim Knoch
- Zhihong Chen
- Yu-ming Lin
- Jing Guo
Citations in the corpus
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gates (2002, background): “Removal of oxygen on the S/D metal by annealing affects the metal work function and lowers the barrier for n-conductio”
- Carbon Nanotubes for High-Performance Electronics - Progress and Prospect (2008, positive): “Both of the trends can be easily understood within the framework of Schottky barrier dominated transport in CNFETs [ 34 ], [35].”
- AC performance of nanoelectronics: towards a ballistic THz nanotube transistor (2004, neutral): “resistance [7].”
- High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. (2007, result): “As with the device mobility, the per tube mobility (as computed in a manner that does not account for the contacts) decreases with channel length (for example, ∼570 cm 2 V −1 s −1 , L e 5 µ m ), which is qualitatively consistent with expectations based on reports on single-tube device”