Zhihong Chen
Materials Chemistry · Science · 2003–2022
A researcher in the Science corpus: 10 papers; trusts 16 researchers and is trusted by 9 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 108 citations into it; #2,874 of 11,513 by trust here, #1,038 by citations
- Atomic and Molecular Physics, and Optics — 47 citations into it; #3,583 of 7,135 by trust here, #258 by citations
- Electrical and Electronic Engineering — 28 citations into it; #5,738 of 16,539 by trust here, #1,085 by citations
- Biomedical Engineering — 19 citations into it
Whom Zhihong Chen trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Ali Javey
- Phaedon Avouris
- Joerg Appenzeller
- Yu-ming Lin
- Jing Guo
- K. Novoselov
- M. Katsnelson
- Richard Martel
Who trusts Zhihong Chen overall
- Joerg Appenzeller
- Yinxiao Yang
- C. Soldano
- L. Tapasztó
- R. Murali
- Phaedon Avouris
- Gianluca Fiori
- F. Akbar
- Mark C. Hersam
- A. Naeemi
Papers from Zhihong Chen's perspective
Ordered by how strongly the researchers Zhihong Chen trusts endorse each paper. Same corpus, a different order for every researcher.
- Fabry - Perot interference in a nanotube electron waveguide (Nature)
- Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
- A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (IEEE Transactions on Electron Devices)
- Energy band-gap engineering of graphene nanoribbons. (Physical Review Letters)
- Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors
- High-performance dual-gate carbon nanotube FETs with 40-nm gate length (IEEE Electron Device Letters)
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
- Vertical tunnel field-effect transistor (IEEE Transactions on Electron Devices)
- Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
- High-performance carbon nanotube field-effect transistor with tunable polarities (IEEE transactions on nanotechnology)
Their papers
- Graphene nano-ribbon electronics (2007) — 1,400 citations
- Transparent, Conductive Carbon Nanotube Films (2004) — 2,780 citations
- Carbon-based electronics. (2007) — 1,923 citations
- High-performance dual-gate carbon nanotube FETs with 40-nm gate length (2005) — 136 citations
- The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. (2005) — 639 citations
- Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005) — 310 citations
- Bulk Separative Enrichment in Metallic or Semiconducting Single-Walled Carbon Nanotubes (2003) — 189 citations
- Electrical observation of subband formation in graphene nanoribbons (2008) — 189 citations
- Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing (2004) — 154 citations
- How to report and benchmark emerging field-effect transistors (2022) — 164 citations