Joachim Knoch

Materials Chemistry · 2004–2010

A researcher in the Science corpus: 9 papers; trusts 15 researchers and is trusted by 18 researchers here, as inferred from the citation graph.

Subfields

• Materials Chemistry — 43 citations into it; #1,488 of 11,513 by trust here, #3,816 by citations
• Electrical and Electronic Engineering — 37 citations into it; #1,962 of 16,539 by trust here, #3,822 by citations
• Biomedical Engineering — 25 citations into it; #2,658 of 10,734 by trust here, #4,640 by citations
• Atomic and Molecular Physics, and Optics — 19 citations into it; #5,807 of 7,135 by trust here, #3,513 by citations

Whom Joachim Knoch trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Joerg Appenzeller
2. K. K. Bhuwalka
3. Ali Javey
4. Phaedon Avouris
5. Yu-ming Lin
6. Jing Guo
7. M. Paulsson
8. Mark S. Lundstrom
9. Claes Thelander
10. William G. Vandenberghe

Who trusts Joachim Knoch overall

1. Siyu Koswatta
2. Joerg Appenzeller
3. Yasin Khatami
4. Qin Zhang
5. Adrian M. Ionescu
6. Alan C. Seabaugh
7. Steven J. Koester
8. Hao Lu
9. Aaron D. Franklin
10. Kaustav Banerjee

Papers from Joachim Knoch's perspective

Ordered by how strongly the researchers Joachim Knoch trusts endorse each paper. Same corpus, a different order for every researcher.

1. Carbon Nanotube Inter- and Intramolecular Logic Gates
2. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
3. Logic Circuits with Carbon Nanotube Transistors (Science)
4. Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
5. Single-walled carbon nanotube electronics
6. Ballistic carbon nanotube field-effect transistors (Nature)
7. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
8. Carbon nanotubes as schottky barrier transistors. (Physical Review Letters)
9. Vertical tunnel field-effect transistor (IEEE Transactions on Electron Devices)
10. A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors (IEEE Transactions on Electron Devices)

Their papers

• Band-to-band tunneling in carbon nanotube field-effect transistors. (2004) — 809 citations
• High-performance carbon nanotube field-effect transistor with tunable polarities (2005) — 476 citations
• The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. (2005) — 639 citations
• Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005) — 310 citations
• Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices (2007) — 285 citations
• Toward Nanowire Electronics (2008) — 333 citations
• Tunneling phenomena in carbon nanotube field‐effect transistors (2008) — 212 citations
• Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (2010) — 210 citations
• Silicon nanowire tunneling field-effect transistors (2008) — 186 citations