Carbon nanotube electronics

By Phaedon Avouris, Joerg Appenzeller, Richard Martel, Shalom J. Wind. Digest. International Electron Devices Meeting,, 2002

1,256 citations recorded by the source corpus.

We briefly review the electronic properties of carbon nanotubes (CNTs) and present results on the fabrication and characteristics of carbon nanotube field-effect transistors (CNTFETs) and simple integrated circuits. A novel approach allowing the catalyst-free synthesis of oriented CNTs is also presented.

Subfields: Materials Chemistry, Organic Chemistry

View Paper: https://www.semanticscholar.org/paper/c792a2e60622a752c95de1450b97d8f98de55c9d

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In Materials Chemistry

1. Phaedon Avouris
2. Joerg Appenzeller
3. Kaustav Banerjee
4. Hong Li
5. Jing Guo
6. Eric Pop
7. Joachim Knoch
8. Zhihong Chen

In Organic Chemistry

1. Phaedon Avouris
2. Jing Guo
3. Hongjie Dai
4. Bernd Nowack
5. T. Bucheli

Citations in the corpus

• Thermal conduction phenomena in carbon nanotubes and related nanostructured materials (2013, background): “C. Individual nanotube devices Carbon nanotubes have proven promising for numerous electronic and optoelectronic devices (Avouris, 2002; Avouris, Chen, and Perebeinos, 2007; Li et al., 2010).”
• High-performance dual-gate carbon nanotube FETs with 40-nm gate length (2005, background): “CARBON NANOTUBEs (CNs) are promising candidates for post-Si nanoelectronics [1].”
• Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, background): “electronic applications to come after Moore's law and ITRS requirements [ 2-4 ].”
• High-performance carbon nanotube field-effect transistor with tunable polarities (2005, background): “Most CNFETs studied so far have adopted a back-gate top-contact geometry (see [17] and [18] for a review), as shown”