Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer

By K. K. Bhuwalka, J. Schulze, Ignaz Eisele. 2004

215 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0675f0ee5b323b1777d2d06f0f185a143453b379

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In Electrical and Electronic Engineering

Citations in the corpus

Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (2005, methodology): “The operational principle of this device has been discussed in detail by means of band-diagrams [12] and band-to-band tunneling generation rate [ 13 ].”
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (2007, methodology): “[10] showed a vertical Si/SiGe TFET with an SS of 44 mV/dec through device simulation.”
Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric (2007, methodology): “Based on this observation, we focus our device optimization on DG Tunnel FETs with high-κ gate dielectrics rather than on the engineering of the material bandgap (as in previous approaches [10], [ 11 ] that proposed Tunnel FETs with SiGe).”
Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (2010, methodology): “Heterostructures with type-II interface represent the steepest possible p-n junctions and have therefore been investigated as TFET performance boosters in the Si/SiGe heterosystem [5], [8]–[10].”
Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field-Effect Transistor (2011, background): “[6], [10] reported that a TFET with a delta layer of SiGe at the edge of the source improves both ION and S.”
Low-subthreshold-swing tunnel transistors (2006, methodology): “Simulations indicate that higher interband current density (850 μA/μm) can be obtained using Ge channels [4].”
Tunnel field-effect transistors as energy-efficient electronic switches (2011, background): “The way in which the bands line up with each other at the heterojunction is also crucia”
Graphene Nanoribbon Tunnel Transistors (2008, background): “THE TUNNELING field-effect transistor (TFET) is attracting attention because of its low subthreshold swing and low OFF-state leakage [1]–[7].”
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “J. Knoch is with the Institute for Thin Film and Interfaces, Forschungszentrum Jülich, D-52425 Jülich, Germany degradation as typically observed for silicon MOSFETs with nanometer dimensions [11].”