Vertical tunnel field-effect transistor

By K. K. Bhuwalka, Stefan Sedlmaier, A. Ludsteck, C. Tolksdorf, Joerg Schulze, Ignaz Eisele. IEEE Transactions on Electron Devices, 2004

261 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e352e3e2833b53928fbccc16d4ce7aa1bd267de4

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In Electrical and Electronic Engineering

Citations in the corpus

Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering (2005, methodology): “The operational principle of this device has been discussed in detail by means of band-diagrams [ 12 ] and band-to-band tunneling generation rate [13].”
Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor (2011, background): “TFETs have been theoretically shown to exhibit a steep SS below the thermal limit of 60 mV/dec while maintaining a reasonable ION depending on the system of materials chosen [5], [7], [8], [10]–[14].”
Steep Subthreshold Slope n- and p-Type Tunnel-FET Devices for Low-Power and Energy-Efficient Digital Circuits (2009, methodology): “T-FET has been proposed in [12] and [16] to improve ION and S, and an n-type double-gate T-FET using high-k material”
The Tunnel Source (PNPN) n-MOSFET: A Novel High Performance Transistor (2008, background): “Thus, the observed subthreshold swing for these devices is substantially greater than 60 mV/dec ([11], [13] and [14]).”
Doping-Less Tunnel Field Effect Transistor: Design and Investigation (2013, background): “attention because of their low subthreshold swing and low OFF-state leakage current [1-8].”
N+ Pocket Doped Vertical TFET Based Dielectric-Modulated Biosensor Considering Non-Ideal Hybridization Issue: A Simulation Study (2020, background): “analytically modelled dielectric-modulated Tunnel FET (DMTFET) based biosensors in the literature [12]–[16] as a promising candidate to overcome these drawbacks since its current mechanism is band-to-band tunneling rather than thermionic emission.”
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “While in principle, by utilizing BTB-tunneling, S-values smaller than 60mV/dec are also achievable in silicon MOSFETs [26], experimentally this situation has not yet been realized [27].”