Logic Circuits with Carbon Nanotube Transistors
By A. Bachtold, P. Hadley, T. Nakanishi, Cees Dekker. Science, 2001
2,291 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b15c187fb1746d609f177bb1a35cd5ef2776d37f
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In Electrical and Electronic Engineering
- Mark S. Lundstrom
- Jing Guo
- Joerg Appenzeller
- Joachim Knoch
- Phaedon Avouris
- Hui‐Ming Cheng
- Supriyo Datta
- H. Philip Wong
In Materials Chemistry
- Phaedon Avouris
- Joerg Appenzeller
- Wing Kam Liu
- Joachim Knoch
- Yu-ming Lin
- D. Qian
- H. Philip Wong
- Jing Guo
Citations in the corpus
- Carbon nanotube electronics (2002, background): “Further opportunities for improvements in the CNTFET performance arise from new insights on the switching mechanism in the CNTFET, as will be discussed in Section V.”
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gates (2002, background): “Several new gate structures have been developed for nanotubes, including bottom aluminium gates with subnanometre-thick native Al 2 O 3 dielectric”