Hao Lu

Electrical and Electronic Engineering · with Seabaugh · 2014

A researcher in the Science corpus: 1 paper; trusts 4 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Hao Lu trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Joerg Appenzeller
  2. Joachim Knoch
  3. Yu-ming Lin
  4. Adrian M. Ionescu
  5. Mathieu Luisier
  6. Alan C. Seabaugh
  7. Dmitri E. Nikonov
  8. Qianqian Huang
  9. Siyu Koswatta

Who trusts Hao Lu overall

  1. Hesameddin Ilatikhameneh
  2. Yaohua Tan

Papers from Hao Lu's perspective

Ordered by how strongly the researchers Hao Lu trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic (Proceedings of the IEEE)
  2. Tunnel field-effect transistors as energy-efficient electronic switches (Nature)
  3. Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing (International Electron Devices Meeting)
  4. Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance (2008 IEEE International Electron Devices Meeting)
  5. Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
  6. Si tunnel transistors with a novel silicided source and 46mV/dec swing (Symposium on VLSI Technology)
  7. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
  8. Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
  9. CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With $\leq 50$-mV/decade Subthreshold Swing (IEEE Electron Device Letters)
  10. Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (IEEE Electron Device Letters)

Their papers