Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.
By Richard Martel, V. Derycke, C. Lavoie, Joerg Appenzeller, Kevin K. Chan, J. Tersoff, Phaedon Avouris. Physical Review Letters, 2001
712 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/85c708108ac08dfcdb948ad043cb63e8ad1456ea
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In Atomic and Molecular Physics, and Optics
- Phaedon Avouris
- Joerg Appenzeller
- Joachim Knoch
- Jing Guo
- Mark S. Lundstrom
- V. Perebeinos
- Yu-ming Lin
- Richard Martel
In Materials Chemistry
- Phaedon Avouris
- Joerg Appenzeller
- Joachim Knoch
- Yu-ming Lin
- Jing Guo
- Mark S. Lundstrom
- V. Perebeinos
- Hongjie Dai
Citations in the corpus
- Carbon Nanotube Electronics and Optoelectronics (2004, background): “However, the finding of ambipolar conduction in CNFETs [ 9 , 10], the transition from p- to n-type conduction upon gas adsorption [8,18], and local gating of the CNFET at the contact [19] led to the notion that SBs must play a significant role.”
- Carbon-nanotube photonics and optoelectronics (2008, background): “In addition to modulating the carrier density in the CNT, the gate voltage also modulates the injection of carriers at the source and drain Schottky barrier”
- Graphene-Based Ambipolar RF Mixers (2010, background): “Furthermore, the concept described in this letter can also be realized in other materials that exhibit ambipolar conduction properties, such as some carbon nanotube transistors (CNTs) [ 16 ].”