Woo Young Choi

Electrical and Electronic Engineering · 2007–2016

A researcher in the Science corpus: 3 papers; trusts 7 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 17 citations into it; #10,540 of 16,539 by trust here, #6,143 by citations

Whom Woo Young Choi trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Joerg Appenzeller
2. Qin Zhang
3. K. K. Bhuwalka
4. Yu-ming Lin
5. Wei Zhao
6. Joachim Knoch

Who trusts Woo Young Choi overall

1. Zhaonian Yang
2. J. Madan
3. Rishu Chaujar
4. D. Abdi
5. Sanjay Kumar
6. Yasin Khatami
7. Rakhi Narang
8. Joachim Knoch
9. Mamidala Jagadesh Kumar
10. Joerg Appenzeller

Papers from Woo Young Choi's perspective

Ordered by how strongly the researchers Woo Young Choi trusts endorse each paper. Same corpus, a different order for every researcher.

1. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
2. Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
3. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
4. Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions (IEEE Electron Device Letters)
5. Germanium-source tunnel field effect transistors with record high ION/IOFF (Symposium on VLSI Technology)
6. Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing (International Electron Devices Meeting)
7. Tunnel field-effect transistor without gate-drain overlap
8. A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
9. Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
10. Fermi pinning-induced thermal instability of metal-gate work functions (IEEE Electron Device Letters)

Their papers

• Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (2007) — 1,727 citations
• Demonstration of L-Shaped Tunnel Field-Effect Transistors (2016) — 271 citations
• Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (2010) — 445 citations