Ballistic carbon nanotube field-effect transistors

By Ali Javey, Jing Guo, Qian Wang, Mark S. Lundstrom, Hongjie Dai. Nature, 2003

2,960 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cd9ba95d45b2f3cbccfe031aec3004f67c55ee15

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Phaedon Avouris
2. Joerg Appenzeller
3. Mark S. Lundstrom
4. Kaustav Banerjee
5. Navin Srivastava
6. Jing Guo
7. Joachim Knoch
8. Hong Li

In Materials Chemistry

1. Phaedon Avouris
2. Kaustav Banerjee
3. Joerg Appenzeller
4. Hong Li
5. Jing Guo
6. Zhihong Chen
7. Joachim Knoch
8. Eric Pop

Citations in the corpus

• Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, background): “In particular the possibility to obtain ballistic transport over several hundred nanometers at room-temperature [2], [3], [4] together with a very large Fermi velocity of around 10(8)cm/s [5] allows for high performance on-state characteristics [6], [7], [8], [9].”
• The One-Dimensional Wigner Crystal in Carbon Nanotubes (2007, methodology): “This may be observable in our system in future experiments provided we can achieve ballistic contacts to the nanotubes, for example by using Pd electrode”
• Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, background): “to understand the physical properties of the new material and to exploit its potentials in electronic applications to come after Moore’s law and ITRS requirements [2]–[4].”