Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

By Joerg Appenzeller, Yu-ming Lin, Joachim Knoch, Zhihong Chen, Phaedon Avouris. IEEE Transactions on Electron Devices, 2005

310 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b43da045bb4bcfcf8b236674783b6044fb98cb9d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Tunnel Field-Effect Transistors: Prospects and Challenges (2015, background): “Since the first experimental proof of subthreshold swing (SS) < 60mV/dec [1], TFET’s prospects have attracted the interest of researchers.”
The Charge Plasma P-N Diode (2008, background): “Note that in the carbon nanotube (CNT) field, some groups use an additional gate to dope the CNT [6].”
Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects (2009, background): “and photovoltaic [17] devices), field emission displays and radiation sources [18], nanometer semiconductor transistors [4], [19]–[22], nanoelectromechanical systems (NEMS) [23], [24], electrostatic discharge (ESD) protection [25], as well as interconnects [26]–[29] and passives [30], [31], due to t”
Tunnel field-effect transistors as energy-efficient electronic switches (2011, background): “This leads to a reduced total capacitance and improves the gate dela”
Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015, background): “…Novakovic1, Gerhard Klimeck1, Rajib Rahman1, and Joerg Appenzeller2 1Network for Computational Nanotechnology, Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA 2Birck Nanotechnology Center, Department of Electrical and Computer Engineering,…”
On the Applicability of Single-Walled Carbon Nanotubes as VLSI Interconnects (2009, background): “Alongside research efforts into developing semiconducting CNT-based transistors [7], metallic CNTs (mCNT) have also been suggested as an interconnect material [8], [9].”
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, background): “silicon [13]–[19], as well as in carbon-nanotube (CNT)-based transistors [20]–[24].”
Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs (2010, background): “However, to date, the best performing experimental realizations still exhibit a poor ON state and a subthreshold swing S < 60 mV/dec only in a narrow gate voltage range [1], [4].”