Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors

By Jing Guo, Ali Javey, H. Dai, Mark S. Lundstrom. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004

153 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a5c9c2f4a93c95a88b923d2458dfbe14a8d9f29b

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In Materials Chemistry

Citations in the corpus

Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs (2008, methodology): “For what concerns the intrinsic switching time τ instead, which represents the typical figure of merit for digital applications, we have used a previously developed comparison method that takes into account the power supply, ON, and OFF states [28].”
Assessment of high-frequency performance potential of carbon nanotube transistors (2005, background): “(The major effect of the 4-nm-thick native oxide is to decrease the parasitic capacitance between the gate and the source (drain) electrode by a factor of 2, which does not change the qualitative conclusions of the paper.) The threshold voltage of the transistor was treated as a fitting parameter, w”
Nanowire Transistor Performance Limits and Applications (2008, methodology): “In order to make a fair comparison with planar devices, the NWFET performance metrics were defined following the benchmarking method proposed by Intel [82], [83].”
Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design (2005, methodology): “By performing the type of analysis described above for both, the T-CNFET and the C-CNFET, we are able to evaluate the gate delay τ as a function of Vdd at a fixed Ion/Ioff ratio of 1000 [39].”
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, background): “5 with a constant VDDbias window as explained in [38].”
Circuit-Level Performance Benchmarking and Scalability Analysis of Carbon Nanotube Transistor Circuits (2009, background): “CARBON Nanotube Field Effect Transistors (CNFETs) are promising candidates as extensions to silicon CMOS due to excellent intrinsic delay (CV/I) at the device level [1]–[4].”
A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements (2015, methodology): “Nonequilibrium Green’s function (NEGF) formalism [16] has been extensively employed to simulate the quantum transport in CNTFETs and assess their performance [7], [8], [17].”