How to report and benchmark emerging field-effect transistors

By Zhihui Cheng, C. Pang, Peiqi Wang, S. Le, Yanqing Wu, D. Shahrjerdi, I. Radu, M. Lemme, L. Peng, Xiangfeng Duan and 6 more. Nature Electronics, 2022

164 citations recorded by the source corpus.

The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way. This Perspective examines the challenges involved in assessing the operation and performance of field-effect transistors based on emerging materials, and provides guidelines for the consistent reporting and benchmarking of the devices.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6efe29dd1416c2050240adb147e1af8ce6ec326c