Tunneling phenomena in carbon nanotube field‐effect transistors

212 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Ultralow-Voltage Bilayer Graphene Tunnel FET (2009, background): “In this regard, it has been recently observed [ 11 ] that 1-D carbon-based devices are more promising than planar silicon devices, because of the small carrier effective mass that enhances the Ion current, and of the small quantum capacitance in the ON-state, which guarantees good electrostatic cont”
Nanomaterials in transistors: From high-performance to thin-film applications (2015, background): “For instance, the presence of a small quantum capacitance (dependent on the density of states), especially in CNTs, has been shown to enable more extensive modulation of the surface potential in the on state of a transistor (50).”
Graphene Nanoribbon Tunnel Transistors (2008, background): “[1], [2] show by simulation that 1-D TFETs are preferred to bulk FETs because of the superior gate control and a reduction of transverse energy component in the 1-D tunneling transport.”
On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010, background): “This observation is in contrast to the previous predictions [16] that the gate delay of TFETs should not depend on the tunneling”