Single-walled carbon nanotube electronics

By Paul L. McEuen, M. Fuhrer, Hongkun Park. 2002

1,186 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c576ce4df76a4ba90afdc2fd64c21f92a643b8d1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Kaustav Banerjee
2. Hong Li
3. Phaedon Avouris
4. Chuan Xu
5. Wei Dang Lu
6. Charles M. Lieber
7. Joerg Appenzeller
8. Mark S. Lundstrom

In Materials Chemistry

1. Phaedon Avouris
2. Kaustav Banerjee
3. Hong Li
4. Joerg Appenzeller
5. Chuan Xu
6. Navin Srivastava
7. James D. Meindl
8. A. Naeemi

Citations in the corpus

• Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects (2008, background): “CNTs have long mean free paths (MFPs) on the order of several micrometers (as compared to 40 nm for Cu at room temperature), which provide low resistivity and possible ballistic transport in short-length interconnects [4].”
• High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design (2009, background): “CARBON nanotubes (CNTs) have been proposed for VLSI interconnect applications [1] due to their outstanding electrical and thermal properties [2]–[5].”
• AC performance of nanoelectronics: towards a ballistic THz nanotube transistor (2004, background): “Experiments [10] indicate that the mean free path in semiconducting nanotubes at room temperature is at least 1 lm, so that nanotubes shorter than 1 lm may behave as ballistic transistors.”
• Compact physical models for multiwall carbon-nanotube interconnects (2006, background): “The conductance per channel is [4], [8]”
• Performance analysis of carbon nanotube interconnects for VLSI applications (2005, background): “Single-walled CNTs (SWCNTs) on the other hand have electron mean free paths of the order of a micron [9].”
• High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. (2007, result): “Similar calculations for the metallic tubes in these devices yield higher and lower resistances in the low- and high-bias regimes, respectively, than the best single-tube device measurement”
• High-performance carbon nanotube field-effect transistor with tunable polarities (2005, background): “Most CNFETs studied so far have adopted a back-gate top-contact geometry (see [17] and [18] for a review), as shown”