High-κ dielectrics for advanced carbon-nanotube transistors and logic gates
By Ali Javey, Hyoungsub Kim, M. Brink, Qian Wang, A. Ural, Jing Guo, Paul C. McIntyre, P. McEuen, Mark S. Lundstrom, Hongjie Dai. 2002
890 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/1a513dc1c056b3d51586ce22bcec970cd3f6bc97
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Mark S. Lundstrom
- Jing Guo
- Anisur Rahman
- Joerg Appenzeller
- Joachim Knoch
- Supriyo Datta
- Phaedon Avouris
- Yu-ming Lin
In Materials Chemistry
- Phaedon Avouris
- Joerg Appenzeller
- Zhihong Chen
- Joachim Knoch
- Jing Guo
- Yu-ming Lin
- Mark S. Lundstrom
- John A. Rogers
Citations in the corpus
- Properties and applications of high-mobility semiconducting nanotubes (2004, background): “Recent improvements have allowed local gate contacts either beneath the nanotubes (Bachtold et al 2001) or on top of the nanotubes (Javey et al 2002, Wind et al 2002) which makes it possible to have several nanotube devices on one chip and address them separately.”