Controlling doping and carrier injection in carbon nanotube transistors

By V. Derycke, Richard Martel, Joerg Appenzeller, Phaedon Avouris. 2002

596 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/477756c315328613bf556a24b2b8020feba68456

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Fuhrer
2. B. M. Kim
3. Jing Guo
4. Ali Javey
5. Mark S. Lundstrom
6. T. Dürkop
7. Paul C. McIntyre
8. Hongjie Dai

In Materials Chemistry

1. Phaedon Avouris
2. Jing Guo
3. Mark S. Lundstrom
4. M. Fuhrer
5. B. M. Kim
6. T. Dürkop
7. Hongjie Dai
8. Ali Javey

Citations in the corpus

• Properties and applications of high-mobility semiconducting nanotubes (2004, background): “Similarly, Derycke et al (2002) and Martel et al (1998) found evidence for barriers at the contacts of their NTFETs.”
• High-κ dielectrics for advanced carbon-nanotube transistors and logic gates (2002, background): “It is not likely that our devices operate as Schottky barrier FETs as suggested for fully gated SWNT”