Nelson Tansu
Condensed Matter Physics · 2002–2013
A researcher in the Science corpus: 17 papers; trusts 10 researchers and is trusted by 11 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 130 citations into it; #191 of 1,948 by trust here, #272 by citations
- Atomic and Molecular Physics, and Optics — 100 citations into it; #1,448 of 7,135 by trust here, #3,070 by citations
- Electrical and Electronic Engineering — 65 citations into it; #12,361 of 16,539 by trust here, #11,977 by citations
- Materials Chemistry — 31 citations into it; #9,778 of 11,513 by trust here, #8,524 by citations
- Biomedical Engineering — 26 citations into it; #8,081 of 10,734 by trust here, #7,436 by citations
- Electronic, Optical and Magnetic Materials — 24 citations into it; #1,276 of 2,886 by trust here, #2,307 by citations
- Mechanics of Materials — 20 citations into it; #1,966 of 6,291 by trust here, #1,848 by citations
Whom Nelson Tansu trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Nelson Tansu overall
Papers from Nelson Tansu's perspective
Ordered by how strongly the researchers Nelson Tansu trusts endorse each paper. Same corpus, a different order for every researcher.
- On the importance of radiative and Auger losses in GaN-based quantum wells
- Auger recombination in InGaN measured by photoluminescence
- Auger recombination rates in nitrides from first principles
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
- Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation
- Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (Journal of Display Technology)
- 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
- Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
- On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
Their papers
- Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses (2009) — 136 citations
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes (2010) — 171 citations
- Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes (2010) — 207 citations
- Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm (2009) — 141 citations
- Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers (2002) — 156 citations
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008) — 141 citations
- Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode (2009) — 170 citations
- Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios (2011) — 209 citations
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013) — 188 citations
- Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes (2013) — 150 citations
- Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal‐Close‐Packed Array (2012) — 166 citations
- Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes (2011) — 168 citations
- III-Nitride Photonics (2010) — 166 citations
- Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers (2010) — 152 citations
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile (2009) — 170 citations
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009) — 220 citations
- Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes (2007) — 309 citations