Shuji Nakamura
Condensed Matter Physics · 2000–2020
A researcher in the Science corpus: 41 papers; trusts 4 researchers and is trusted by 10 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 163 citations into it; #379 of 1,948 by trust here, #22 by citations
- Atomic and Molecular Physics, and Optics — 87 citations into it; #2,332 of 7,135 by trust here, #541 by citations
- Electrical and Electronic Engineering — 70 citations into it; #12,025 of 16,539 by trust here, #2,914 by citations
- Mechanics of Materials — 52 citations into it; #5,705 of 6,291 by trust here, #582 by citations
- Biomedical Engineering — 26 citations into it; #6,406 of 10,734 by trust here, #2,092 by citations
Whom Shuji Nakamura trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Shuji Nakamura overall
Papers from Shuji Nakamura's perspective
Ordered by how strongly the researchers Shuji Nakamura trusts endorse each paper. Same corpus, a different order for every researcher.
- Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
- First-principles calculations for defects and impurities: Applications to III-nitrides
- Nonpolar and Semipolar Group III Nitride-Based Materials
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (Nature Materials)
- Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
- Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
- Strain-induced polarization in wurtzite III-nitride semipolar layers
- Bulk GaN crystals grown by HVPE
- Bulk ammonothermal GaN
- Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
Their papers
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening (2004) — 1,305 citations
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) — 667 citations
- Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) — 201 citations
- Room-temperature continuous-wave lasing in GaN/InGaN microdisks (2007) — 290 citations
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) — 205 citations
- Prospects for LED lighting (2009) — 1,759 citations
- Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (2008) — 165 citations
- Strain-induced polarization in wurtzite III-nitride semipolar layers (2006) — 696 citations
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) — 408 citations
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates (2005) — 161 citations
- Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs (2007) — 136 citations
- High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (2021) GaN Substrates (2010) — 161 citations
- High-Power Blue-Violet Semipolar (202̄1̄) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2 (2011) — 163 citations
- Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter (2020) — 193 citations
- Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation (2020) — 137 citations
- Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation (2019) — 197 citations
- Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs (2017) — 159 citations
- Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact (2015) — 133 citations
- Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes (2015) — 241 citations
- Efficient and stable laser-driven white lighting (2013) — 170 citations