SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

By G. Parish, Sarah L. Keller, Steven P. DenBaars, Umesh K. Mishra. 2000

140 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/ce34b4e906a1341ee7cad6fdf11c71a029d23f88

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Umesh K. Mishra
2. Thomas E. Kazior
3. YiFeng Wu
4. Steven P. DenBaars
5. Jungwoo Joh
6. J. D. del Alamo
7. B. Baliga
8. J. Speck

In Electrical and Electronic Engineering

1. Umesh K. Mishra
2. YiFeng Wu
3. Thomas E. Kazior
4. Steven P. DenBaars
5. P. Klein
6. Jungwoo Joh
7. J. D. del Alamo

In Mechanics of Materials

1. Umesh K. Mishra
2. Steven P. DenBaars

Citations in the corpus

• Trapping effects in GaN and SiC microwave FETs (2002, background): “Lower pressures have been observed to correlate with more severe current collapse as well as a greater incorporation of carbon impurities into the layers [45]–[47].”
• AlGaN/AlN/GaN high-power microwave HEMT (2001, unknown): “, density of impurities is higher [3]).”
• Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001, methodology): “To address the dispersion problem, efforts were undertaken to further optimize the growth of the AlGaN/GaN heterostructures with respect to low point defect densities [ 15 ], and to develop a processing scheme which pays special attention to the device surface.”