High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

By C. Neufeld, N. Toledo, S. C. Cruz, M. Iza, Steven P. DenBaars, Umesh K. Mishra. 2008

438 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/2af921cbcb9f21c063302b68dbe12f76571b142d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. R. Arif

In Biomedical Engineering

1. Nelson Tansu
2. Guangyu Liu
3. Hongping Zhao

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. Xiao-Hang Li
7. H. Tong
8. R. Arif

Citations in the corpus

• InGaN Solar Cells: Present State of the Art and Important Challenges (2012, background): “(b) Typical J–V and power density versus voltage characteristic for InGaN/GaN pin solar cell under concentrated AM0 illumination for 166-μm (solid line) and 25-μm (dashed line) contact grid spacing [44].”
• III-Nitride Photonics (2010, background): “High-efficiency multijunction tandem solar cells of InGaN/InN material have the potential to compete with the traditional III–V tandem cells [73]–[75].”