Michael R. Krames
Condensed Matter Physics · 2001–2017
A researcher in the Science corpus: 16 papers; trusts 5 researchers and is trusted by 13 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 52 citations into it; #312 of 1,948 by trust here, #23 by citations
- Atomic and Molecular Physics, and Optics — 45 citations into it; #4,442 of 7,135 by trust here, #699 by citations
- Electrical and Electronic Engineering — 38 citations into it; #10,150 of 16,539 by trust here, #3,723 by citations
- Mechanics of Materials — 12 citations into it
- Biomedical Engineering — 7 citations into it
Whom Michael R. Krames trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Michael R. Krames overall
- M. Crawford
- A. David
- Lorenzo Trevisanello
- Hongping Zhao
- Matteo Meneghini
- J. Tsao
- Mike E. Coltrin
- Michael S. Shur
- Jeffrey McCord
Papers from Michael R. Krames's perspective
Ordered by how strongly the researchers Michael R. Krames trusts endorse each paper. Same corpus, a different order for every researcher.
- High-power phosphor-converted light-emitting diodes based on III-Nitrides
- Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes
- Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
- Ultra-High Efficiency White Light Emitting Diodes
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
- InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
- Illumination with solid state lighting technology
- Band parameters for III–V compound semiconductors and their alloys
- High brightness AlGaInP light-emitting diodes
- Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
Their papers
- Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007) — 1,797 citations
- High-power phosphor-converted light-emitting diodes based on III-Nitrides (2002) — 443 citations
- InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures (2004) — 391 citations
- High-power AlGaInN flip-chip light-emitting diodes (2001) — 408 citations
- High performance thin-film flip-chip InGaN–GaN light-emitting diodes (2006) — 324 citations
- Research challenges to ultra‐efficient inorganic solid‐state lighting (2007) — 399 citations
- Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes (2005) — 200 citations
- Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes (2008) — 343 citations
- Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes (2003) — 136 citations
- High Power LEDs – Technology Status and Market Applications (2002) — 225 citations
- Colour gamut size and shape influence colour preference (2017) — 64 citations
- Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation (2015) — 211 citations
- History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination (2013) — 350 citations
- History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes (2008) — 220 citations
- Auger recombination in InGaN measured by photoluminescence (2007) — 1,098 citations
- Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2 (2007) — 440 citations