Heavy doping effects in Mg-doped GaN

By P. Kozodoy, Huili Grace Xing, Steven P. DenBaars, Umesh K. Mishra, A. Saxler, R. Perrin, S. Elhamri, W. Mitchel. 2000

374 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/eeed86b211b7f579f3c1414e6a6033c2e41086d9

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In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. R. Arif
5. Jing Zhang
6. Y. Ee

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif

In Materials Chemistry

1. Hongping Zhao
2. Nelson Tansu

Citations in the corpus

• Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, methodology): “The GaN hole mobility value of 22 cm V s is used in the calculation [51].”