Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

By Steven P. DenBaars, D. Feezell, Katheryn Kelchner, Siddha Pimputkar, C. Pan, C. Yen, Shinichi Tanaka, Yuji Zhao, N. Pfaff, R. Farrell and 5 more. 2013

408 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7fcd607e3492bb101569481bccf9bd6f746e722b

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. Michael Moody
2. Baptiste Gault

In Materials Chemistry

1. Baptiste Gault
2. Michael Moody

Citations in the corpus

• Behavior of molecules and molecular ions near a field emitter (2015, background): “Three recent articles report APT measurement of composition of N in GaN as a function of the laser pulse energy and/or standing voltage [61–63].”
• Global Substance Flow Analysis of Gallium, Germanium, and Indium: Quantification of Extraction, Uses, and Dissipative Losses within their Anthropogenic Cycles (2015, methodology): “GaN is used as a substrate in LEDs, doped with different phosphors to create the different light spectrums (DenBaars et al. 2013).”