Hongping Zhao
Electronic, Optical and Magnetic Materials · Applied Physics Letters · 2008–2019
A researcher in the Science corpus: 15 papers; trusts 6 researchers and is trusted by 9 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 130 citations into it
- Materials Chemistry — 117 citations into it; #10,163 of 11,513 by trust here, #6,413 by citations
- Condensed Matter Physics — 105 citations into it; #328 of 1,948 by trust here, #431 by citations
- Atomic and Molecular Physics, and Optics — 65 citations into it; #2,447 of 7,135 by trust here, #3,118 by citations
- Electrical and Electronic Engineering — 45 citations into it
- Mechanics of Materials — 22 citations into it; #2,466 of 6,291 by trust here, #2,550 by citations
- Biomedical Engineering — 13 citations into it; #7,716 of 10,734 by trust here, #7,436 by citations
Whom Hongping Zhao trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- R. Arif
- Nelson Tansu
- Y. Ee
- J. Piprek
- Guangyu Liu
- J. Hader
- Oliver Ambacher
- G. Mueller
- Michael R. Krames
- Nicholas J. Kirsch
Who trusts Hongping Zhao overall
Papers from Hongping Zhao's perspective
Ordered by how strongly the researchers Hongping Zhao trusts endorse each paper. Same corpus, a different order for every researcher.
- On the importance of radiative and Auger losses in GaN-based quantum wells
- Auger recombination rates in nitrides from first principles
- Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation
- Auger recombination in InGaN measured by photoluminescence
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
- 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
- Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (Journal of Display Technology)
- Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
Their papers
- Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses (2009) — 136 citations
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes (2010) — 171 citations
- Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes (2010) — 207 citations
- Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm (2009) — 141 citations
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008) — 141 citations
- MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties (2019) — 273 citations
- Optical signatures of deep level defects in Ga2O3 (2018) — 141 citations
- Donors and deep acceptors in β-Ga2O3 (2018) — 247 citations
- Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition (2016) — 136 citations
- Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition (2016) — 195 citations
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013) — 188 citations
- III-Nitride Photonics (2010) — 166 citations
- Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers (2010) — 152 citations
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile (2009) — 170 citations
- Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009) — 220 citations