Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

By T. Fujii, Yana Gao, Rajat Sharma, E. Hu, Steven P. DenBaars, Shuji Nakamura. 2004

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Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses (2009, methodology): “or photochemical etching [6], but the roughness obtained using these methods was not uniform, and thus, leads to a variation”
One-dimensional ZnO nanostructures: Solution growth and functional properties (2011, background): “Extensive efforts have been made to tackle this problem, such as roughening the emitting surface of the thin film [404, 405], reshaping the geometry of the LED architecture [406, 407], utilizing a resonant cavity [408], coupling with surface plasmons [409], fabricating photonic crystal structures [4”
III-Nitride Ultraviolet Emitters: Technology and Applications (2015, background): “In contrast, nonradiative recombination lifetimes in the ns range have been demonstrated for AlGaN quantum well emitters on low defect density bulk AlN substrates [58, 59].”
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination (2013, methodology): “The resulting verticalthin-film device (VTF) employed roughening of the exposed N-face GaN to frustrate TIR, and resulted in an estimated light extraction efficiency of 75% [37].”