Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
By Hongping Zhao, Guangyu Liu, Nelson Tansu. 2010
171 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/9f8a62f163341b53164ffe26e6d1ab48e0021a44
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Condensed Matter Physics
Citations in the corpus
- Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012, methodology): “For example, Schubert et al. proposed quaternary AlGaInN quantum barriers to suppress the polarization discontinuity between the adjacent well, and barrier demonstrates the excellency in reducing the efficiency droop [14].”
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, methodology): “Approaches to enhance radiative efficiency based on novel QW design with enhanced optical matrix elements have been demonstrated [5]–[16].”