N-polar GaN epitaxy and high electron mobility transistors
By Man Hoi Wong, Stacia Keller, Nidhi, Sansaptak Dasgupta, D. Denninghoff, S. Kolluri, David F. Brown, Jing Lu, N. Fichtenbaum, E. Ahmadi, Uttam Singisetti and 5 more. 2013
200 citations recorded by the source corpus.
This paper reviews the progress of N-polar () GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/55097e06b61e971d4b4aee81a0f4a390b60f9387
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs (2018, background): “quencies, there are requirements placed on device design for which N-polar GaN is well suited to address [11].”