J. Speck
Condensed Matter Physics · 2000–2020
A researcher in the Science corpus: 62 papers; trusts 4 researchers and is trusted by 7 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 250 citations into it; #450 of 1,948 by trust here, #8 by citations
- Electronic, Optical and Magnetic Materials — 210 citations into it; #2,587 of 2,886 by trust here, #840 by citations
- Materials Chemistry — 181 citations into it; #11,144 of 11,513 by trust here, #2,626 by citations
- Electrical and Electronic Engineering — 115 citations into it
- Atomic and Molecular Physics, and Optics — 95 citations into it; #4,135 of 7,135 by trust here, #586 by citations
- Mechanics of Materials — 54 citations into it; #3,667 of 6,291 by trust here, #319 by citations
Whom J. Speck trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts J. Speck overall
Papers from J. Speck's perspective
Ordered by how strongly the researchers J. Speck trusts endorse each paper. Same corpus, a different order for every researcher.
- Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
- First-principles calculations for defects and impurities: Applications to III-nitrides
- Nonpolar and Semipolar Group III Nitride-Based Materials
- AlGaN/GaN HEMTs-an overview of device operation and applications (Proceedings of the IEEE)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
- AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
Their papers
- (Ga,Mn)As as a digital ferromagnetic heterostructure (2000) — 145 citations
- High-power AlGaN/GaN HEMTs for Ka-band applications (2005) — 458 citations
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors (2004) — 175 citations
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) — 667 citations
- Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) — 201 citations
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) — 205 citations
- N-polar GaN epitaxy and high electron mobility transistors (2013) — 200 citations
- Prospects for LED lighting (2009) — 1,759 citations
- Nonpolar and Semipolar Group III Nitride-Based Materials (2009) — 241 citations
- Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (2008) — 165 citations
- Strain-induced polarization in wurtzite III-nitride semipolar layers (2006) — 696 citations
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) — 408 citations
- AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy (2001) — 322 citations
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates (2005) — 161 citations
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (2000) — 1,080 citations
- Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs (2007) — 136 citations
- Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices (2012) — 276 citations
- High-Power Blue-Violet Semipolar (202̄1̄) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2 (2011) — 163 citations
- Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) — 219 citations
- Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) — 197 citations