Ben Kaczer

Electrical and Electronic Engineering · 2000–2011

A researcher in the Science corpus: 14 papers; trusts 4 researchers and is trusted by 14 researchers here, as inferred from the citation graph.

Subfields

Whom Ben Kaczer trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tibor Grasser
  2. Hans Reisinger
  3. A. E. Islam
  4. Souvik Mahapatra
  5. Stewart E. Rauch
  6. Dieter K. Schroder
  7. Asen Asenov

Who trusts Ben Kaczer overall

  1. Tibor Grasser
  2. Souvik Mahapatra
  3. Xiaojun Li
  4. Hans Reisinger
  5. Dieter K. Schroder
  6. James H. Stathis
  7. M. A. Alam
  8. A. E. Islam
  9. Jin Qin
  10. Haldun Kufluoglu

Papers from Ben Kaczer's perspective

Ordered by how strongly the researchers Ben Kaczer trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  3. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  4. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  5. RTS amplitudes in decananometer MOSFETs: 3-D simulation study
  6. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  7. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  8. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  9. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
  10. The Universality of NBTI Relaxation and its Implications for Modeling and Characterization (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)

Their papers