Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

By Ben Kaczer, V. Arkhipov, Robin Degraeve, N. Collaert, Guido Groeseneken, M. Goodwin. 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual., 2005

174 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3a014f170c293dba0ca506accb2316e0d1d76fec

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

A two-stage model for negative bias temperature instability (2009, methodology): “This has been explained by the bias-dependence of H+ drift [8] or the bias-dependence of hole-detrapping via valence band and interface states [1].”
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “available for the passivation of dangling bonds [6]–[8].”
The negative bias temperature instability in MOS devices: A review (2006, methodology): “After [29].”
A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “[27] have been found to be artifact of measurement error [18].”
A comprehensive model for PMOS NBTI degradation: Recent progress (2007, methodology): “The conclusion of dispersive transport has been based on classical measurement technique with measurement delays of 200 ms [2,20] 500 ms [1].”
Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, methodology): “I. INTRODUCTION N EGATIVE-BIAS temperature instability (NBTI), as thename suggests, indicates a temperature-accelerated degradation in PMOS devices when it is stressed with negative gate voltage.”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, methodology): “1) [4-6] indicating an underlying dispersive mechanism [7].”
The Universality of NBTI Relaxation and its Implications for Modeling and Characterization (2007, background): “In particular, the value of the extracted power-law exponent depends significantly on the delay introduced during the measurement [5] [17] [21].”
Negative bias temperature instability: What do we understand? (2007, methodology): “use a disorder-controlled kinetics model in which the disorder due to energy distribution of deep localized hydrogen states in the SiO2 leads to a wide distribution of hydrogen hopping times [35].”
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, result): “behavior, in contrast to a conventional determination of thermal activation done on wide FETs [19].”
On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007, methodology): “However, although NBTI in pure SiO2 or moderate N2% PNO devices is shown to be dominated by ∆NIT [3],[4], the importance of ∆Nh to overall ∆VT (especially in thicker TNO films) remains unresolved [8]-[11],[20],[21].”