Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
By Tibor Grasser, Hans Reisinger, P. Wagner, Ben Kaczer. 2010
141 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f75ba8c345a1d4aaeb26c73aab6337d7cb0081e5
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In Electrical and Electronic Engineering
- Tibor Grasser
- Hans Reisinger
- Thomas Aichinger
- Ben Kaczer
- Michael Nelhiebel
- Philipp Hehenberger
- Wolfgang Goes
Citations in the corpus
- The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “9 and 10) allows for the analysis of these steps as a function of stress/recovery bias conditions and temperature [24], [25], [52] and has revealed a number of interesting facts”