Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric
By C. Shen, M. F. Li, C. Foo, T. Yang, Daming Huang, A. Yap, G. Samudra, Y. Yeo. International Electron Devices Meeting, 2006
171 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/949f008c17f849ca9b6989ba58bdfca018186445
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Tibor Grasser
- Souvik Mahapatra
- M. A. Alam
- Hans Reisinger
- Ben Kaczer
- Haldun Kufluoglu
- Thomas Aichinger
- Wolfgang Gustin
Citations in the corpus
- A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “and when measured at the pulse maxima using faster method [25].”
- Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology (2007, unknown): “10 [26].”
- Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, background): “Assuming N0 NIT [2], [12] and dNIT/dt ∼ NIT/t [23], (2) simplifies to N (0) H = kfN0 −NIT/t krNIT .”
- Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, methodology): “(47) can now be used to give a simple method for the extraction of g by simply taking the negative mixed partial derivative of a given DVth stress/recovery data set, gðsc; seÞ @2DV thðsc; seÞ @sc@se : ð48Þ If the CET map is represented on logarithmic axes, one has to use ~gðsc; seÞ ¼ scsegðsc; seÞ; ”
- The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, methodology): “Data from [12, 13, 14] have been extrapolated to 10ks.”
- Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, background): “This is consistent with ΔVth data extracted in some ultra-fast measurements [9], which observe exponents < ~0.”
- The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “All these results clearly demonstrate the central role of charge trapping in NBTI [17], [20], [21], [24], [25], [43], [44],”