Origin of NBTI variability in deeply scaled pFETs

By Ben Kaczer, Tibor Grasser, P. Roussel, J. Franco, Robin Degraeve, L. Ragnarsson, Eddy Simoen, Guido Groeseneken, Hans Reisinger. IEEE International Reliability Physics Symposium, 2010

325 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c727c66f8a845d2d132af0ca9198337cdb45a847

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tibor Grasser
2. Wolfgang Gustin
3. Hans Reisinger

Citations in the corpus

• The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, methodology): “The origin and size of step height variations in FETs of a similar geometry as the ones used here is explained in [ 15 ].”
• Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “Recently, an exponential distribution was also observed in NBTI and PBTI experiments on small-area devices [74,56].”