The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

By Tibor Grasser, Hans Reisinger, P. Wagner, F. Schanovsky, Wolfgang Goes, Ben Kaczer. IEEE International Reliability Physics Symposium, 2010

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Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019, background): “However, the spectroscopy of individual defects (see NBTI literature [41], [62]) has shown that “slow” defects do not necessarily have a “deep” energy or are deep in the oxide.”
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors (2016, background): “As the dynamics appear to be very similar to Si FETs [40], we expect that they can be described using the models previously developed for Si technologies [25, 29, 41].”
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, methodology): “[ 10 ]). In total we analyzed the thermal activation of roughly 100 defects and since this seemingly non-thermally-activated contribution is actually existing in our samples (see Fig. 2), we would by no means have overlooked such a class of not-thermally-activated defects.”
Origin of NBTI variability in deeply scaled pFETs (2010, methodology): “Finally, we will argue that NBTI in future downscaled devices will be treated as a stochastic ensemble of individual defects, Poisson-distributed in number per device, with each defect described by its impact on the channel conduction discussed here and its capture and emission times [5, 9].”