AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits

By R. Fernández, Ben Kaczer, A. Nackaerts, S. Demuynck, R. Rodríguez, M. Nafría, Guido Groeseneken. International Electron Devices Meeting, 2006

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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, methodology): “3) The duty-factor (DF)-dependent degradation predicted by the RD theory follows DF, whereas, experimentally, a step-shaped curve is observed, with a very sharp drop of the degradation, even for small deviations from the ac case [25], [36], [37].”
A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “3 of [11]), the PDC dependence of ac NBTI from different sources [28],”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, background): “11b also reproduces the recoverable component being independent of frequency (not shown) [27].”
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, background): “[ 21 ] are showing a relation of ΔVT vs. duty cycle having the typical S-like shape.”