Tibor Grasser
Electrical and Electronic Engineering · 2007–2021
A researcher in the Science corpus: 13 papers; trusts 12 researchers and is trusted by 15 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 99 citations into it; #2,572 of 16,539 by trust here, #6,474 by citations
- Materials Chemistry — 61 citations into it
- Electronic, Optical and Magnetic Materials — 5 citations into it
Whom Tibor Grasser trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Ben Kaczer
- Hans Reisinger
- P. Blöchl
- Souvik Mahapatra
- A. E. Islam
- Dieter K. Schroder
- Asen Asenov
- Haldun Kufluoglu
- M. A. Alam
- Wolfgang Gustin
Who trusts Tibor Grasser overall
- Souvik Mahapatra
- Ben Kaczer
- Hans Reisinger
- Nilesh Goel
- D. Fleetwood
- Thomas Aichinger
- S. Desai
- Wolfgang Goes
- Wolfgang Gustin
- Shashank Gupta
Papers from Tibor Grasser's perspective
Ordered by how strongly the researchers Tibor Grasser trusts endorse each paper. Same corpus, a different order for every researcher.
- Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
- Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
- AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
- Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- RTS amplitudes in decananometer MOSFETs: 3-D simulation study
- A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
- On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
- The Universality of NBTI Relaxation and its Implications for Modeling and Characterization (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
- A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
- Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
Their papers
- The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010) — 210 citations
- Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012) — 546 citations
- A two-stage model for negative bias temperature instability (2009) — 222 citations
- Analytic modeling of the bias temperature instability using capture/emission time maps (2011) — 177 citations
- The Universality of NBTI Relaxation and its Implications for Modeling and Characterization (2007) — 169 citations
- The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability (2010) — 291 citations
- Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors (2010) — 141 citations
- The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors (2016) — 247 citations
- Origin of NBTI variability in deeply scaled pFETs (2010) — 325 citations
- The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials (2021) — 305 citations
- Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability (2019) — 176 citations
- Bias Temperature Instability for Devices and Circuits (2014) — 154 citations
- The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011) — 460 citations