M. A. Alam

Electrical and Electronic Engineering · IEEE Transactions on Electron Devices · 2004–2019

A researcher in the Science corpus: 15 papers; trusts 12 researchers and is trusted by 27 researchers here, as inferred from the citation graph.

Subfields

Whom M. A. Alam trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Souvik Mahapatra
  2. Ben Kaczer
  3. Dieter K. Schroder
  4. I. Reda
  5. M. Ryyan Khan
  6. J. McPherson

Who trusts M. A. Alam overall

  1. Souvik Mahapatra
  2. James H. Stathis
  3. Teng Xu
  4. Wenping Wang
  5. Haldun Kufluoglu
  6. Gennadi Bersuker
  7. Xiaojun Li
  8. Dieter K. Schroder
  9. Sufi Zafar
  10. Sanjay V. Kumar

Papers from M. A. Alam's perspective

Ordered by how strongly the researchers M. A. Alam trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  3. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  4. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  5. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  6. The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (IEEE International Reliability Physics Symposium)
  7. Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements (2006 IEEE International Reliability Physics Symposium Proceedings)
  8. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  9. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)
  10. A comprehensive model for PMOS NBTI degradation: Recent progress (Microelectronics and reliability)

Their papers