Consistent model for short-channel nMOSFET after hard gate oxide breakdown

By Ben Kaczer, R. Degraeve, A. D. Keersgieter, K. V. D. Mieroop, V. Simons, G. Groeseneken. 2002

165 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/be341d83a715d82e6a8104b0d3bb0f487694cf56

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In Electrical and Electronic Engineering

1. Jin Qin
2. Xiaojun Li
3. Joseph B. Bernstein

Citations in the corpus

• Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation (2008, methodology): “Therefore, nMOSFET with oxide breakdown and operated at negative gate voltage can be modeled with a gate resistor, two bipolar transistors, and the original nMOSFET [47], [ 49 ].”