Dieter K. Schroder

Electrical and Electronic Engineering · 2001–2007

A researcher in the Science corpus: 5 papers; trusts 5 researchers and is trusted by 5 researchers here, as inferred from the citation graph.

Subfields

Whom Dieter K. Schroder trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. James H. Stathis
  2. Ben Kaczer
  3. Sufi Zafar
  4. M. A. Alam
  5. Bipul Chandra Paul

Who trusts Dieter K. Schroder overall

  1. Tibor Grasser
  2. Oliver Hilt
  3. M. Jošt
  4. M. A. Alam
  5. Wenping Wang
  6. Souvik Mahapatra
  7. P. Klein
  8. Jan Kuzmik
  9. Ben Kaczer
  10. Sanjay V. Kumar

Papers from Dieter K. Schroder's perspective

Ordered by how strongly the researchers Dieter K. Schroder trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  3. Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors
  4. Impact of NBTI on the temporal performance degradation of digital circuits (IEEE Electron Device Letters)
  5. The negative bias temperature instability in MOS devices: A review (Microelectronics and reliability)
  6. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
  7. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
  8. Physical mechanisms of negative-bias temperature instability
  9. The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (IEEE International Reliability Physics Symposium)
  10. Dynamic NBTI of PMOS transistors and its impact on device lifetime (2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual.)

Their papers