RTS amplitudes in decananometer MOSFETs: 3-D simulation study

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Comprehensive Analysis of Random Telegraph Noise Instability and Its Scaling in Deca–Nanometer Flash Memories (2009, background): “doping [8], [9], and field intensification at the cell corners in the W direction, where shallow trench isolations (STIs) define the cell active area [10], [11].”
Origin of NBTI variability in deeply scaled pFETs (2010, background): “The exponential distribution of single-charge ΔVth can be understood if non-uniformities in the pFET channel due to random dopant fluctuations (RDF) are considered [ 13-15 ].”
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “This is a consequence of the random locations of the discrete dopants in the channel [50].”
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “As such, we cannot easily record f L2 , since it is already implicitly contained in the ‘unshifted/reference’ Vth.”
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs (2003, background): “charge on the current in decananometer MOSFET when the random discrete dopant distribution in the channel is properly taken into account [26], [61].”