A critical examination of the mechanics of dynamic NBTI for PMOSFETs

By Muhammad A. Alam. IEEE International Electron Devices Meeting 2003, 2003

350 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d52d24f920ebe3c0786a2081ed8c256298b85e9d

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Impact of NBTI on the temporal performance degradation of digital circuits (2005, methodology): “The interface trap generation is modeled successfully in the Reaction–Diffusion framework [4].”
A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “atomic hydrogen (H) diffusion [6], [23], [40], [41] to”
The negative bias temperature instability in MOS devices: A review (2006, methodology): “An analytic form for recovery, after a stress time tstress, has been given for classical (Gaussian) diffusion [73] as”
A comprehensive model of PMOS NBTI degradation (2005, methodology): “This diffusion controlled annealing phase (analogous to the diffusion-controlled generation phase described by Eq. (2a)) can be treated analytically in the following manner [ 20 ].”
BTI reliability of 45 nm high-K + metal-gate process technology (2008, methodology): “This recovery behavior has been explained within the frame work of RD model by others where dissociated hydrogen from NBTI stress is back-diffused to the interface [15].”
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “The model has seen a number of refinements during the last couple of years [18,80,81], with the current version relying on the diffusion of neutral H2.”
A comprehensive model for PMOS NBTI degradation: Recent progress (2007, background): “(Bottom) The frequency independence arises from the fact that if the total duration of stress is the same, the R–D model predicts generation of equal amount of H [6].”
On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress (2006, background): “Classical one-dimensional (1-D) reaction– diffusion (R–D) model [16] can successfully explain NIT generation and recovery characteristics for NBTI stress [17], [18].”
Impact of NBTI on SRAM read stability and design for reliability (2006, methodology): “can be solved for the steady state condition dNIT dt = 0 to obtain an expression for NIT as derived in [3] and [17]: NIT =rkfN0 kr (Dt)0:25: (3)”
Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs (2004, methodology): “The R-D model is schematically explained in Fig. 8. The time evolution of generation is modeled by the following equations [10], [ 21 ], [22]:”
Ubiquitous relaxation in BTI stressing—New evaluation and insights (2008, background): “4 decades in time (assuming transition from 10% to 90%), while the Reaction-Diffusion (RD) model [20] relaxation is expected to occur over ~3.”
Modeling and minimization of PMOS NBTI effect for robust nanometer design (2006, background): “They may involve oxide traps and other charged residues [13-16].”
Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology (2007, background): “To date, research work on NBTI and CHC has been active only within the communities of device and reliability physics [2]–[4], [8], [17].”
The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “the degradation as a function of time can be well captured [1], [ 3 ]–[5].”