Souvik Mahapatra

Electrical and Electronic Engineering · 2004–2018

A researcher in the Science corpus: 8 papers; trusts 5 researchers and is trusted by 20 researchers here, as inferred from the citation graph.

Subfields

Whom Souvik Mahapatra trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tibor Grasser
  2. M. A. Alam
  3. Ben Kaczer
  4. Hans Reisinger
  5. P. B. Kumar
  6. Bipul Chandra Paul
  7. Dieter K. Schroder
  8. A. E. Islam
  9. J. McPherson
  10. Haldun Kufluoglu

Who trusts Souvik Mahapatra overall

  1. Wenping Wang
  2. M. A. Alam
  3. Tibor Grasser
  4. Sanjay V. Kumar
  5. James H. Stathis
  6. Haldun Kufluoglu
  7. Teng Xu
  8. Hans Reisinger
  9. Nilesh Goel
  10. K. Ahmed

Papers from Souvik Mahapatra's perspective

Ordered by how strongly the researchers Souvik Mahapatra trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  3. A comprehensive framework for predictive modeling of negative bias temperature instability (2004 IEEE International Reliability Physics Symposium. Proceedings)
  4. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  5. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)
  6. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  7. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  8. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  9. Universal recovery behavior of negative bias temperature instability [PMOSFETs] (IEEE International Electron Devices Meeting 2003)
  10. NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] (IEEE International Electron Devices Meeting 2003)

Their papers