On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?

By Souvik Mahapatra, K. Ahmed, D. Varghese, A. Islam, G. Gupta, L. Madhav, D. Saha, M.A. Alam. 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007

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A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “4) NBTI shows strong dependence on gate insulator process, particularly on nitrogen (N) distribution profile in the gate insulator that governs degradation magnitude (ΔVT ), longer time power-law time exponent (n), T activation energy (EA), and field acceleration factor (Γ) [5]–[7], [9]–[11]; it has”
Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation (2007, background): “…and (3b) correspond to the conservation of fluxes of diffusing hydrogen species (H and H2) near the interface (along x-axis), whereas (3c) and (3d) describe the diffusion (along x-axis) of H and H2. kHN2H and kH2NH2 terms in (3) incorporate the H−H2 conversion within the generalized R-D framework.”
The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress (2010, methodology): “Data from [12, 13, 14] have been extrapolated to 10ks.”
A two-stage model for negative bias temperature instability (2009, methodology): “• So far, hole trapping has been mainly considered as being into pre-existing traps which rapidly fill but are not related to the actual NBTI mechanism, a somewhat parasitic component which has to be removed to get to the heart of NBTI [10].”