Hans Reisinger

Electrical and Electronic Engineering · 2006–2019

A researcher in the Science corpus: 8 papers; trusts 2 researchers and is trusted by 4 researchers here, as inferred from the citation graph.

Subfields

Whom Hans Reisinger trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Tibor Grasser
  2. Ben Kaczer
  3. James H. Stathis
  4. Souvik Mahapatra

Who trusts Hans Reisinger overall

  1. Tibor Grasser
  2. Souvik Mahapatra
  3. Ben Kaczer
  4. A. E. Islam
  5. Wolfgang Goes
  6. Stewart E. Rauch
  7. Nilesh Goel
  8. Thomas Aichinger

Papers from Hans Reisinger's perspective

Ordered by how strongly the researchers Hans Reisinger trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  2. Material dependence of hydrogen diffusion: implications for NBTI degradation (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  3. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)
  4. RTS amplitudes in decananometer MOSFETs: 3-D simulation study
  5. Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric (International Electron Devices Meeting)
  6. AC NBTI studied in the 1 Hz -- 2 GHz range on dedicated on-chip CMOS circuits (International Electron Devices Meeting)
  7. A two-stage model for negative bias temperature instability (IEEE International Reliability Physics Symposium)
  8. Two independent components modeling for Negative Bias Temperature Instability (IEEE International Reliability Physics Symposium)
  9. The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability (IEEE International Reliability Physics Symposium)
  10. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? (2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual)

Their papers