Two independent components modeling for Negative Bias Temperature Instability

By V. Huard. IEEE International Reliability Physics Symposium, 2010

170 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/31b045023189f2fa72440e20222b9cc1f48aba87

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Tibor Grasser
2. Souvik Mahapatra
3. Hans Reisinger
4. M. A. Alam
5. Thomas Aichinger
6. A. E. Islam
7. Ben Kaczer
8. Shashank Gupta

In Materials Chemistry

1. Tibor Grasser

Citations in the corpus

• A Comparative Study of Different Physics-Based NBTI Models (2013, methodology): “alternative models [29], [42], [46], [50].”
• The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps (2011, background): “Furthermore, it was demonstrated that the complete NBTI degradation can be annealed by increasing the temperature to 300 ◦C [22], [73], [74], which is not much larger than the usual NBTI characterization temperature of 200 ◦C.”
• Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities (2012, background): “Unfortunately, the microscopic nature of this permanent component is still unclear [40,41,28,29,42,34].”